Surface point defects on bulk oxides: atomically-resolved scanning probe microscopy.
نویسندگان
چکیده
Metal oxides are abundant in nature and they are some of the most versatile materials for applications ranging from catalysis to novel electronics. The physical and chemical properties of metal oxides are dramatically influenced, and can be judiciously tailored, by defects. Small changes in stoichiometry introduce so-called intrinsic defects, e.g., atomic vacancies and/or interstitials. This review gives an overview of using Scanning Probe Microscopy (SPM), in particular Scanning Tunneling Microscopy (STM), to study the changes in the local geometric and electronic structure related to these intrinsic point defects at the surfaces of metal oxides. Three prototypical systems are discussed: titanium dioxide (TiO2), iron oxides (Fe3O4), and, as an example for a post-transition-metal oxide, indium oxide (In2O3). Each of these three materials prefers a different type of surface point defect: oxygen vacancies, cation vacancies, and cation adatoms, respectively. The different modes of STM imaging and the promising capabilities of non-contact Atomic Force Microscopy (nc-AFM) techniques are discussed, as well as the capability of STM to manipulate single point defects.
منابع مشابه
Scanning tunneling microscopy investigation of the TiO2 anatase „101... surface
We report the first scanning tunneling microscopy ~STM! study of single-crystalline anatase. Atomically resolved images of the ~101! surface are consistent with a bulk-truncated (131) termination. Step edges run predominantly in the @010#, @ 1̄11# , and @ 1̄ 1̄1# directions. The surface is stable with very few point defects. Fourfold-coordinated Ti atoms at step edges are preferred adsorption site...
متن کاملEvidence for the Tunneling Site on Transition-Metal Oxides: TiO2(110).
We present atomically resolved scanning tunneling microscopy (STM) images from TiO2(110) surfaces. After annealing nearly perfect stoichiometric 1 3 1 surfaces to elevated temperatures in ultrahigh vacuum, randomly distributed oxygen vacancies are observed. The apparent shape of these defects provides strong evidence that the STM is imaging undercoordinated Ti atoms, as do firstprinciples pseud...
متن کاملChemically induced Jahn-Teller ordering on manganite surfaces.
Physical and electrochemical phenomena at the surfaces of transition metal oxides and their coupling to local functionality remains one of the enigmas of condensed matter physics. Understanding the emergent physical phenomena at surfaces requires the capability to probe the local composition, map order parameter fields and establish their coupling to electronic properties. Here we demonstrate t...
متن کاملDetermination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy
We identified the charge carrier compensation mechanism in Te-doped GaAs with atomically resolved scanning tunneling microscopy. Three types of defects were found: tellurium donors (TeAs), Ga vacancies (VGa), and Ga vacancy–donor complexes (VGa– TeAs). We show quantitatively that the compensation in Te-doped bulk GaAs is exclusively caused by vacancy– donor complexes in contrast to Si-doped GaA...
متن کاملDeep Learning of Atomically Resolved Scanning Transmission Electron Microscopy Images: Chemical Identification and Tracking Local Transformations.
Recent advances in scanning transmission electron and scanning probe microscopies have opened exciting opportunities in probing the materials structural parameters and various functional properties in real space with angstrom-level precision. This progress has been accompanied by an exponential increase in the size and quality of data sets produced by microscopic and spectroscopic experimental ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Chemical Society reviews
دوره 46 7 شماره
صفحات -
تاریخ انتشار 2017